Category:Electronic occupancy: Difference between revisions
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| Within the [[PAW method]] there is the occupation <math>f_k</math> for the plane-wave part and the on-site occupation matrix <math>\rho</math> that characterize the [[Electronic ground-state properties|electronic state]]. Below we list tags and sections that can be used to influence the occupation, besides the obvious influence of the specific [[Ionic minimization|structure]] and [[XC functional|exchange-correlation effects]]. | Within the [[PAW method]] there is the occupation <math>f_k</math> for the plane-wave part and the on-site occupation matrix <math>\rho</math> that characterize the [[Electronic ground-state properties|electronic state]]. Below we list tags and sections that can be used to influence the occupation, besides the obvious influence of the specific [[Ionic minimization|structure]] and [[XC functional|exchange-correlation effects]]. | ||
| ==  | == Modeling excited states by constrained occupation calculations == | ||
| The '''delta self-consistent field (ΔSCF)''' method provides a practical way to obtain neutral excitation energies within density functional theory (DFT) by explicitly constraining the electronic '''occupations''' of selected orbitals. | |||
| In contrast to [[:Category:Linear_response|linear-response]] or [[:Category:Many-body perturbation theory|many-body approaches]], ΔSCF directly evaluates the total energy difference between ground and excited electronic configurations from self-consistent calculations. | |||
| This approach connects closely to experimental observables such as the '''vertical absorption energy (VAE)''', '''vertical emission energy (VEE)''', and '''zero-phonon lines (ZPLs)''', which are key quantities in the [[:Category:Dielectric properties|optical spectroscopy]] of point defects in semiconductors and insulators {{cite|Freysoldt2014}}. | |||
| *[[Delta self-consistent field|<math display="inline">\Delta\mathrm{SCF}</math> calculations]]: example of zero-phonon line calculation of <math display="inline">\mathrm{NV}^-</math> center in diamond | |||
| ==  | == Density-functional theory plus dynamical mean-field theory == | ||
| '''Density-functional theory plus dynamical mean-field theory (DFT+DMFT)'''{{cite|kotliar:rmp:2006}} is a method that provides a more accurate treatment of '''strongly correlated materials''' compared to [[:Category:DFT+U|DFT+U]]. While [[:Category:DFT+U|DFT+U]] is computationally much more affordable, it incorporates a static correction for localized electron interactions. DFT+DMFT, on the other hand, goes further by treating these interactions dynamically, capturing frequency-dependent electron correlations. A key feature of DFT+DMFT is that the charge density is updated using the DMFT solution, ensuring a self-consistent feedback between the correlated electronic states and the DFT potential. This not only improves the description of phenomena like '''metal-insulator transitions''' and quasiparticle renormalization but also allows for the calculation of spectral properties such as '''photoemission spectra''', '''transport properties''', and '''total energies relevant to structural distortions'''. To facilitate DFT+DMFT calculations, VASP provides a general interface to DMFT codes, allowing occupation updates {{TAG|ICHARG}}=5 via an external file {{FILE|vaspgamma.h5}} / {{FILE|GAMMA}} to update the charge density. | |||
| *{{TAG|DFT+DMFT calculations}}: example of performing DFT+DMFT calculations using the [https://triqs.github.io/triqs TRIQS software]{{cite|parcollet:cpc:196}} | *{{TAG|DFT+DMFT calculations}}: example of performing DFT+DMFT calculations using the [https://triqs.github.io/triqs TRIQS software]{{cite|parcollet:cpc:196}} | ||
| == References == | == References == | ||
Latest revision as of 06:39, 20 October 2025
Within the PAW method there is the occupation [math]\displaystyle{ f_k }[/math] for the plane-wave part and the on-site occupation matrix [math]\displaystyle{ \rho }[/math] that characterize the electronic state. Below we list tags and sections that can be used to influence the occupation, besides the obvious influence of the specific structure and exchange-correlation effects.
Modeling excited states by constrained occupation calculations
The delta self-consistent field (ΔSCF) method provides a practical way to obtain neutral excitation energies within density functional theory (DFT) by explicitly constraining the electronic occupations of selected orbitals. In contrast to linear-response or many-body approaches, ΔSCF directly evaluates the total energy difference between ground and excited electronic configurations from self-consistent calculations. This approach connects closely to experimental observables such as the vertical absorption energy (VAE), vertical emission energy (VEE), and zero-phonon lines (ZPLs), which are key quantities in the optical spectroscopy of point defects in semiconductors and insulators [1].
- [math]\displaystyle{ \Delta\mathrm{SCF} }[/math] calculations: example of zero-phonon line calculation of [math]\displaystyle{ \mathrm{NV}^- }[/math] center in diamond
Density-functional theory plus dynamical mean-field theory
Density-functional theory plus dynamical mean-field theory (DFT+DMFT)[2] is a method that provides a more accurate treatment of strongly correlated materials compared to DFT+U. While DFT+U is computationally much more affordable, it incorporates a static correction for localized electron interactions. DFT+DMFT, on the other hand, goes further by treating these interactions dynamically, capturing frequency-dependent electron correlations. A key feature of DFT+DMFT is that the charge density is updated using the DMFT solution, ensuring a self-consistent feedback between the correlated electronic states and the DFT potential. This not only improves the description of phenomena like metal-insulator transitions and quasiparticle renormalization but also allows for the calculation of spectral properties such as photoemission spectra, transport properties, and total energies relevant to structural distortions. To facilitate DFT+DMFT calculations, VASP provides a general interface to DMFT codes, allowing occupation updates ICHARG=5 via an external file vaspgamma.h5 / GAMMA to update the charge density.
- DFT+DMFT calculations: example of performing DFT+DMFT calculations using the TRIQS software[3]
References
- ↑ Christoph Freysoldt, Blazej Grabowski, Tilmann Hickel, Jörg Neugebauer, Georg Kresse, Anderson Janotti, Rev. Mod. Phys. (2014).
- ↑ G. Kotliar, S. Y. Savrasov, K. Haule, V. S. Oudovenko, O. Parcollet, and C. A. Marianetti, Electronic structure calculations with dynamical mean-field theory, Rev. Mod. Phys. 78, 865 (2006)
- ↑ O. Parcollet, M. Ferrero, T. Ayral, H. Hafermann, I. Krivenko, L. Messio and P. Seth, Computer Physics Communications 196, 398 (2015).
Pages in category "Electronic occupancy"
The following 16 pages are in this category, out of 16 total.
