Template:Cite: Difference between revisions

Revision as of 16:14, 23 March 2026

This template is similar to how LaTeX manages citations, you have a key and then a text that is included. The template translates this to the mediawiki format. Usage {{cite|key}}.

Mind: Add new citations to the end of this list. Be wary of the whitespace here as it will be introduced to the other document when you include it via the template. A good test is that the preview page should be completely empty and not show any empty lines.

@@ Line 2,107: / Line 2,107: @@
 }}{{
 Reference|key=altindal:2007|show={{{1}}}|
-bib=Ş. Altındal and H. Kanbur and A. Tataroğlu and M.M. Bülbül, ''The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)'', Physica B: Condensed Matter '''399''', 146-154 (2007).|
+bib=Ş. Altındal, H. Kanbur, A. Tataroğlu, and M.M. Bülbül, ''The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)'', Physica B: Condensed Matter '''399''', 146-154 (2007).|
 link=https://doi.org/10.1016/j.physb.2007.06.002
+}}{{
+Reference|key=baldereschi:prl:1988|show={{{1}}}|
+bib=A. Baldereschi, S. Baroni, and R. Resta ''Band offsets in lattice-matched heterojunctions: A model and first-principles calculations for GaAs/AlAs'', Phys. Rev. Lett. '''61''', 734 (1988).|
+link=https://doi.org/10.1103/PhysRevLett.61.734
+}}
+{{
+Reference|key=peressi:1998|show={{{1}}}|
+bib=M. Peressi, M. Binggeli, and A. Baldereschi ''Band engineering at interfaces: theory and numerical experiments'', J. Phys. D: Appl. Phys. '''31''', 1273 (1998).|
+link=https://doi.org/10.1088/0022-3727/31/11/002
 }}